ESH3B-M3/9AT

Details

Manufacturer No ESH3B-M3/9AT

Manufacturer Vishay General Semiconductor - Diodes Division

Category Diodes - Rectifiers - Single

Datasheet Datasheet

Description DIODE GEN PURP 100V 3A DO214AB

Price

$0.24535

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Type

Parameter

  • Mfr

    Vishay General Semiconductor - Diodes Division

  • Speed

    Fast Recovery =< 500ns, > 200mA (Io)

  • Series

    -

  • Package

    Tape & Reel (TR)

  • Diode Type

    Standard

  • Mounting Type

    Surface Mount

  • Package / Case

    DO-214AB, SMC

  • Product Status

    Active

  • Base Product Number

    ESH3

  • Capacitance @ Vr, F

    70pF @ 4V, 1MHz

  • Supplier Device Package

    DO-214AB (SMC)

  • Reverse Recovery Time (trr)

    40 ns

  • Current - Reverse Leakage @ Vr

    5 µA @ 100 V

  • Voltage - DC Reverse (Vr) (Max)

    100 V

  • Current - Average Rectified (Io)

    3A

  • Operating Temperature - Junction

    -55°C ~ 175°C

  • Voltage - Forward (Vf) (Max) @ If

    900 mV @ 3 A

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Qty

Unit Price

Total Price

1

$0.23799

$0.23799

50

$0.22572

$11.286

100

$0.21836

$21.836

1000

$0.20855

$208.55

Substitute Products

ESH3B-M3/57T

Vishay General Semiconductor - Diodes Division

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ESH3B-E3/57T

Vishay General Semiconductor - Diodes Division

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ESH3B-E3/9AT

Vishay General Semiconductor - Diodes Division

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ESH3BHE3_A/I

Vishay General Semiconductor - Diodes Division

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ESH3BHE3_A/H

Vishay General Semiconductor - Diodes Division

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S4B M6G

Taiwan Semiconductor Corporation

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ESH3B M6G

Taiwan Semiconductor Corporation

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ESH3B R7

Taiwan Semiconductor Corporation

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ESH3B R7G

Taiwan Semiconductor Corporation

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ESH3B R6

Taiwan Semiconductor Corporation

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ESH3B M6

Taiwan Semiconductor Corporation

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ESH3B R6G

Taiwan Semiconductor Corporation

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