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EDI8F8512LP85B6C

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Manufacturer No EDI8F8512LP85B6C

Manufacturer Microsemi Memory, Processors & Storage

Category SRAMs

Datasheet Datasheet

Description SRAM Module, 512KX8, 85ns, CMOS, DIP-32

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Type

Parameter

  • I/O Type

    COMMON

  • Objectid

    1923724637

  • Risk Rank

    9.06

  • Rohs Code

    No

  • Technology

    CMOS

  • Subcategory

    SRAMs

  • JESD-30 Code

    R-XDMA-T32

  • Memory Width

    8

  • Organization

    512KX8

  • Package Code

    DIP

  • Package Shape

    RECTANGULAR

  • Package Style

    MICROELECTRONIC ASSEMBLY

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • Memory Density

    4194304 bit

  • Memory IC Type

    SRAM MODULE

  • Operating Mode

    ASYNCHRONOUS

  • Power Supplies

    5 V

  • Terminal Pitch

    2.54 mm

  • Access Time-Max

    85 ns

  • Number of Words

    524288 words

  • Parallel/Serial

    PARALLEL

  • Temperature Grade

    COMMERCIAL

  • Terminal Position

    DUAL

  • Supply Current-Max

    0.13 mA

  • Number of Functions

    1

  • Number of Terminals

    32

  • Package Description

    DIP-32

  • Standby Current-Max

    0.000125 A

  • Standby Voltage-Min

    2 V

  • Number of Words Code

    512000

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    UNSPECIFIED

  • Reach Compliance Code

    unknown

  • Output Characteristics

    3-STATE

  • Package Equivalence Code

    DIP32,.6

  • Operating Temperature-Max

    70°C

  • Operating Temperature-Min

  • Supply Voltage-Max (Vsup)

    5.5 V

  • Supply Voltage-Min (Vsup)

    4.5 V

  • Supply Voltage-Nom (Vsup)

    5 V

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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Qty

Unit Price

Total Price

16849

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