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EDI8F8512C85B6I
Details
Manufacturer No EDI8F8512C85B6I
Manufacturer Microsemi Memory, Processors & Storage
Category SRAMs
Datasheet Datasheet
Description SRAM Module, 512KX8, 85ns, CMOS, DIP-32
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Type
Parameter
I/O Type
COMMON
Objectid
1923724626
Risk Rank
9.06
Rohs Code
No
Technology
CMOS
Subcategory
SRAMs
JESD-30 Code
R-XDMA-T32
Memory Width
8
Organization
512KX8
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory Density
4194304 bit
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Power Supplies
5 V
Terminal Pitch
2.54 mm
Access Time-Max
85 ns
Number of Words
524288 words
Parallel/Serial
PARALLEL
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Supply Current-Max
0.13 mA
Number of Functions
1
Number of Terminals
32
Package Description
DIP-32
Standby Current-Max
0.005 A
Standby Voltage-Min
4.5 V
Number of Words Code
512000
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Reach Compliance Code
unknown
Output Characteristics
3-STATE
Package Equivalence Code
DIP32,.6
Operating Temperature-Max
85°C
Operating Temperature-Min
-40°C
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Unit Price
Total Price
16848
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