Details
Manufacturer No DP0150BLP4-7B
Manufacturer Diodes Incorporated
Category Bipolar Transistors - BJT
Package DFN1006H4-3
Datasheet Datasheet
Description Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Price
$0.165
Type
Parameter
RoHS
Details
Brand
Diodes Incorporated
Series
DP0150
Packaging
Reel
Technology
Si
Subcategory
Transistors
Unit Weight
0.282192 oz
Manufacturer
Diodes Incorporated
Product Type
BJTs - Bipolar Transistors
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
DFN1006H4-3
Product Category
Bipolar Transistors - BJT
Transistor Polarity
PNP
Pd - Power Dissipation
450 mW
Gain Bandwidth Product fT
80 MHz
Emitter- Base Voltage VEBO
5 V
Collector- Base Voltage VCBO
50 V
Continuous Collector Current
- 100 mA
Maximum DC Collector Current
200 mA
Maximum Operating Temperature
150°C
Minimum Operating Temperature
-55°C
DC Collector/Base Gain hfe Min
200 at - 2 mA, - 6 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
300 mV
Factory Pack Quantity: Factory Pack Quantity
10000
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Qty
Unit Price
Total Price
1
$0.16005
$0.16005
50
$0.1518
$7.59
100
$0.14685
$14.685
1000
$0.14025
$140.25
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