Details
Manufacturer No DDC122TH-7
Manufacturer Diodes Incorporated
Category BJT Transistors Arrays
Package SOT-563, SOT-666
Datasheet Datasheet
Description
Price
Call
Type
Parameter
RoHS
yes
Mount
Surface Mount
Width
1.2mm
Height
600μm
Length
1.6mm
Pbfree
yes
Weight
3.005049mg
hFE Min
100
HTS Code
8541.21.00.75
Polarity
NPN
ECCN Code
EAR99
Inventory
2459
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
6
Published
2007
REACH SVHC
Part Status
Active
RoHS Status
ROHS3 Compliant
Subcategory
BIP General Purpose Small Signal
JESD-30 Code
JESD-609 Code
e3
Mounting Type
Surface Mount
Terminal Form
FLAT
Current Rating
Number of Pins
6
Package / Case
SOT-563, SOT-666
Terminal Finish
Matte Tin (Sn)
Transistor Type
2 NPN - Pre-Biased (Dual)
Base Part Number
DDC122
Factory Lead Time
19 Weeks
Power Dissipation
Additional Feature
BUILT IN BIAS RESISTOR
Max Output Current
Number of Elements
2
Voltage - Rated DC
Radiation Hardening
No
Qualification Status
Resistor - Base (R1)
220 Ω
Transition Frequency
200MHz
Element Configuration
Dual
Max Breakdown Voltage
Max Collector Current
100mA
Max Power Dissipation
150mW
Reach Compliance Code
Frequency - Transition
200MHz
Number of Terminations
6
Transistor Application
Operating Supply Voltage
DC Current Gain-Min (hFE)
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
Transistor Element Material
SILICON
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
Peak Reflow Temperature (Cel)
260
Vce Saturation (Max) @ Ib, Ic
300mV @ 250μA, 5mA
Collector Emitter Voltage (VCEO)
40V
Current - Collector Cutoff (Max)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
50V
Time@Peak Reflow Temperature-Max (s)
40
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 5V
Send RFQ
Qty
Unit Price
Total Price
6920
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