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CSD19536KTTT

Details

Manufacturer No CSD19536KTTT

Manufacturer Texas Instruments

Category Power Field-Effect Transistors

Datasheet Datasheet

Description 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175

Price

$5.4

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Type

Parameter

  • HTS Code

    8541.29.00.95

  • ECCN Code

    EAR99

  • Rohs Code

    No

  • Brand Name

    Texas Instruments

  • Popularity

    1359

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE

  • JEDEC-95 Code

    TO-263AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    MATTE TIN

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    1

  • Source Content uid

    CSD19536KTTT

  • Number of Terminals

    2

  • Package Description

    SMALL OUTLINE, R-PSSO-G2

  • Part Life Cycle Code

    Active

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    not_compliant

  • Drain Current-Max (ID)

    200 A

  • Transistor Application

    SWITCHING

  • Feedback Cap-Max (Crss)

    61 pF

  • DS Breakdown Voltage-Min

    100 V

  • Operating Temperature-Max

    175°C

  • Operating Temperature-Min

    -55°C

  • Moisture Sensitivity Level

    2

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    806 mJ

  • Peak Reflow Temperature (Cel)

    260

  • Drain-source On Resistance-Max

    0.0028 Ω

  • Pulsed Drain Current-Max (IDM)

    400 A

  • Time@Peak Reflow Temperature-Max (s)

    30

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Qty

Unit Price

Total Price

1

$5.238

$5.238

50

$4.968

$248.4

100

$4.806

$480.6

1000

$4.59

$4590

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