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CJD3055BK
Details
Manufacturer No CJD3055BK
Manufacturer Central Semiconductor Corp
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,
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Type
Parameter
HTS Code
8541.29.00.95
Objectid
1466784322
ECCN Code
EAR99
Risk Rank
9.82
Rohs Code
No
VCEsat-Max
8 V
Pbfree Code
No
Subcategory
Other Transistors
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
not_compliant
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
5
Operating Temperature-Max
150°C
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
1.75 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
60 V
Power Dissipation Ambient-Max
20 W
Transition Frequency-Nom (fT)
2 MHz
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Unit Price
Total Price
3082
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