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BYV28-200/20

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Manufacturer No BYV28-200/20

Manufacturer NXP Semiconductors

Category Rectifier Diodes

Datasheet Datasheet

Description DIODE 1.9 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode

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Type

Parameter

  • HTS Code

    8541.10.00.80

  • Objectid

    1518403772

  • ECCN Code

    EAR99

  • Risk Rank

    9.11

  • Diode Type

    RECTIFIER DIODE

  • Technology

    AVALANCHE

  • Application

    GENERAL PURPOSE

  • JESD-30 Code

    O-LALF-W2

  • Configuration

    SINGLE

  • Package Shape

    ROUND

  • Package Style

    LONG FORM

  • Surface Mount

    NO

  • Terminal Form

    WIRE

  • Case Connection

    ISOLATED

  • Number of Phases

    1

  • Terminal Position

    AXIAL

  • Number of Elements

    1

  • Output Current-Max

    1.9 A

  • Source Content uid

    BYV28-200/20

  • Number of Terminals

    2

  • Package Description

    O-LALF-W2

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    GLASS

  • Reach Compliance Code

    unknown

  • Diode Element Material

    SILICON

  • Reverse Recovery Time-Max

    0.025 µs

  • Rep Pk Reverse Voltage-Max

    200 V

  • Non-rep Pk Forward Current-Max

    90 A

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Qty

Unit Price

Total Price

8324

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Substitute Products

BYV28-200-TAP

Vishay Intertechnologies

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

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BYV28-200-TR

Vishay Intertechnologies

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

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BYV28-200

NXP Semiconductors

DIODE 1.9 A, 200 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

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BYV28-200

General Instrument

Rectifier Diode, 1 Phase, 1 Element, 3.5A, 200V V(RRM), Silicon,

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BYV28-200-E3/54

Vishay Intertechnologies

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 200V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

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