Details
Manufacturer No BUK9Y22-30B,115
Manufacturer Nexperia
Category Power Field-Effect Transistors
Datasheet Datasheet
Description N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin
Price
Call
Type
Parameter
Pin Count
4
Brand Name
Nexperia
Popularity
18
JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-235
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Part Package Code
SOIC
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Source Content uid
BUK9Y22-30B,115
Number of Terminals
4
Package Description
SMALL OUTLINE, R-PSSO-G4
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
37.7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Manufacturer Package Code
SOT669
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
47 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.024 Ω
Pulsed Drain Current-Max (IDM)
150.7 A
Time@Peak Reflow Temperature-Max (s)
30
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Qty
Unit Price
Total Price
3774
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