BUK752R3-40E

Details

Manufacturer No BUK752R3-40E

Manufacturer NXP Semiconductors

Category Power Field-Effect Transistors

Datasheet Datasheet

Description 120A, 40V, 0.0023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN

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Type

Parameter

  • ECCN Code

    EAR99

  • Rohs Code

    Yes

  • Popularity

    8

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-220AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    TIN

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    1

  • Reference Standard

    AEC-Q101; IEC-60134

  • Source Content uid

    BUK752R3-40E

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Transferred

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    120 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    40 V

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    622 mJ

  • Drain-source On Resistance-Max

    0.0023 Ω

  • Pulsed Drain Current-Max (IDM)

    1035 A

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Total Price

17022

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