Details
Manufacturer No BUK752R3-40E
Manufacturer NXP Semiconductors
Category Power Field-Effect Transistors
Datasheet Datasheet
Description 120A, 40V, 0.0023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
Price
Call
Type
Parameter
ECCN Code
EAR99
Rohs Code
Yes
Popularity
8
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Reference Standard
AEC-Q101; IEC-60134
Source Content uid
BUK752R3-40E
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Transferred
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
120 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
40 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
622 mJ
Drain-source On Resistance-Max
0.0023 Ω
Pulsed Drain Current-Max (IDM)
1035 A
Send RFQ
Qty
Unit Price
Total Price
17022
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method