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BST82,235

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Manufacturer No BST82,235

Manufacturer NXP

Category Small Signal Field-Effect Transistors

Datasheet Datasheet

Description BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

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Type

Parameter

  • HTS Code

    8541.21.00.95

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Rohs Code

    Yes

  • Brand Name

    NXP Semiconductor

  • Popularity

    115

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Finish

    TIN

  • Part Package Code

    TO-236

  • Terminal Position

    DUAL

  • Number of Elements

    1

  • Source Content uid

    BST82,235

  • Number of Terminals

    3

  • Package Description

    SMALL OUTLINE, R-PDSO-G3

  • Part Life Cycle Code

    Transferred

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    0.175 A

  • Transistor Application

    SWITCHING

  • Feedback Cap-Max (Crss)

    6 pF

  • DS Breakdown Voltage-Min

    80 V

  • Manufacturer Package Code

    SOT23

  • Operating Temperature-Max

    150°C

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    0.3 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    0.175 A

  • Peak Reflow Temperature (Cel)

    260

  • Drain-source On Resistance-Max

    10 Ω

  • Time@Peak Reflow Temperature-Max (s)

    30

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Unit Price

Total Price

15227

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