BST15,115

Details

Manufacturer No BST15,115

Manufacturer NXP USA Inc.

Category Single BJT Transistors

Package TO-243AA

Datasheet Datasheet

Description

Price

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Type

Parameter

  • RoHS

    yes

  • Mount

  • Width

  • Height

  • Length

  • Weight

  • HTS Code

  • ECCN Code

    EAR99

  • Inventory

    8082

  • Lead Free

  • Packaging

    Tape & Reel (TR)

  • Pin Count

    3

  • Published

    1998

  • Part Status

    Obsolete

  • Power - Max

    1.3W

  • RoHS Status

    ROHS3 Compliant

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PSSO-F3

  • Configuration

    SINGLE

  • JESD-609 Code

    e3

  • Mounting Type

    Surface Mount

  • Surface Mount

    YES

  • Terminal Form

    FLAT

  • Current Rating

  • Package / Case

    TO-243AA

  • Case Connection

    COLLECTOR

  • Terminal Finish

    TIN

  • Transistor Type

    PNP

  • Base Part Number

    BST15

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Voltage - Rated DC

  • Qualification Status

    Not Qualified

  • Transition Frequency

    15MHz

  • Element Configuration

  • Max Breakdown Voltage

  • Max Collector Current

  • Max Power Dissipation

  • Operating Temperature

    150°CTJ

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    unknown

  • Frequency - Transition

    15MHz

  • Gain Bandwidth Product

  • Number of Terminations

    3

  • Transistor Application

    SWITCHING

  • Emitter Base Voltage (VEBO)

  • Power Dissipation-Max (Abs)

    1W

  • Transistor Element Material

    SILICON

  • Continuous Collector Current

  • Collector Base Voltage (VCBO)

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Vce Saturation (Max) @ Ib, Ic

    750mV @ 5mA, 50mA

  • Current - Collector (Ic) (Max)

    200mA

  • Collector Emitter Voltage (VCEO)

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Collector Emitter Breakdown Voltage

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    30 @ 50mA 10V

  • Voltage - Collector Emitter Breakdown (Max)

    200V

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Qty

Unit Price

Total Price

16762

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SOT-89 PNP 200V 0.2A

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BF623

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Power Bipolar Transistor, 0.02A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

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