BFT92,215

Details

Manufacturer No BFT92,215

Manufacturer NXP USA Inc.

Category RF BJT Transistors

Package TO-236-3, SC-59, SOT-23-3

Datasheet Datasheet

Description

Price

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Type

Parameter

  • HTS

  • Gain

  • PPAP

  • RoHS

    yes

  • Type

  • Mount

  • EU RoHS

  • HTS Code

    8541.21.00.75

  • Material

  • Mounting

  • ECCN (US)

  • ECCN Code

    EAR99

  • Frequency

  • Inventory

    19357

  • Packaging

    Tape & Reel (TR)

  • Pin Count

    3

  • Published

    1997

  • Automotive

  • Lead Shape

  • PCB changed

  • Part Status

    Obsolete

  • Power - Max

    300mW

  • RoHS Status

    ROHS3 Compliant

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

    SINGLE

  • JEDEC-95 Code

    TO-236AB

  • JESD-609 Code

    e3

  • Mounting Type

    Surface Mount

  • Package Width

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Current Rating

  • Number of Pins

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Package Height

  • Package Length

  • Terminal Finish

    Tin (Sn)

  • Transistor Type

    PNP

  • Base Part Number

    BFT92

  • Supplier Package

  • Factory Lead Time

    8 Weeks

  • Power Dissipation

  • Terminal Position

    DUAL

  • Additional Feature

    LOW NOISE

  • Number of Elements

    1

  • Reference Standard

    CECC

  • Voltage - Rated DC

  • Qualification Status

    Not Qualified

  • Transition Frequency

    5000MHz

  • Max Breakdown Voltage

  • Max Collector Current

  • Max Power Dissipation

  • Operating Temperature

    175°CTJ

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

  • Standard Package Name

  • Frequency - Transition

    5GHz

  • Highest Frequency Band

    ULTRA HIGH FREQUENCY B

  • Number of Terminations

    3

  • Transistor Application

    AMPLIFIER

  • Minimum DC Current Gain

  • Typical Power Gain (dB)

  • Max Operating Temperature

  • Maximum Noise Figure (dB)

  • Min Operating Temperature

  • Noise Figure (dB Typ @ f)

    2.5dB @ 500MHz

  • Emitter Base Voltage (VEBO)

  • Number of Elements per Chip

  • Operational Bias Conditions

  • Power Dissipation-Max (Abs)

    0.3W

  • Transistor Element Material

    SILICON

  • Collector Base Voltage (VCBO)

  • Minimum DC Current Gain Range

  • Peak Reflow Temperature (Cel)

    260

  • Power Dissipation Ambient-Max

    0.3W

  • Collector-Base Capacitance-Max

  • Current - Collector (Ic) (Max)

    25mA

  • Maximum Power Dissipation (mW)

  • Typical Input Capacitance (pF)

  • Typical Output Capacitance (pF)

  • Collector Emitter Voltage (VCEO)

  • Maximum DC Collector Current (A)

  • Maximum Emitter Base Voltage (V)

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Maximum Collector Base Voltage (V)

  • Maximum Transition Frequency (MHz)

  • Collector Emitter Breakdown Voltage

  • Maximum Operating Temperature (°C)

  • Minimum Operating Temperature (°C)

  • Maximum Emitter Cut-Off Current (nA)

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    20 @ 14mA 10V

  • Maximum Collector-Emitter Voltage (V)

  • Maximum Collector Cut-Off Current (nA)

  • Maximum DC Collector Current Range (A)

  • Maximum Collector-Emitter Voltage Range (V)

  • Voltage - Collector Emitter Breakdown (Max)

    15V

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Qty

Unit Price

Total Price

25840

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