Details
Manufacturer No BFS17SE6327
Manufacturer Infineon Technologies AG
Category RF Small Signal Bipolar Transistors
Datasheet Datasheet
Description RF Small Signal Bipolar Transistor, 0.025A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
Price
Call
Type
Parameter
Objectid
1537711327
ECCN Code
EAR99
Risk Rank
9.03
Rohs Code
Yes
Subcategory
Other Transistors
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
2
Source Content uid
BFS17SE6327
Number of Terminals
6
Package Description
SMALL OUTLINE, R-PDSO-G6
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
compliant
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
150°C
Collector Current-Max (IC)
0.025 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.28 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
15 V
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
2500 MHz
Collector-Base Capacitance-Max
0.8 pF
Send RFQ
Qty
Unit Price
Total Price
506
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method