BFS17HTC

Details

Manufacturer No BFS17HTC

Manufacturer Diodes Incorporated

Category RF BJT Transistors

Package TO-236-3, SC-59, SOT-23-3

Datasheet Datasheet

Description

Price

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Type

Parameter

  • PPAP

  • RoHS

    yes

  • Type

  • Mount

    Surface Mount

  • Width

  • Height

  • Length

  • Pbfree

  • Weight

  • EU RoHS

  • hFE Min

  • HTS Code

    8541.21.00.75

  • Material

  • Mounting

  • Polarity

  • ECCN (US)

  • ECCN Code

    EAR99

  • Frequency

  • Inventory

    7145

  • Lead Free

    Lead Free

  • Packaging

    Tape & Reel (TR)

  • Pin Count

  • Published

  • Automotive

  • Lead Shape

  • REACH SVHC

  • PCB changed

  • Part Status

    Obsolete

  • Power - Max

  • RoHS Status

    RoHS Compliant

  • Subcategory

  • Termination

  • Halogen Free

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

  • JESD-609 Code

  • Mounting Type

    Surface Mount

  • Package Width

  • Surface Mount

  • Terminal Form

    GULL WING

  • Current Rating

    25mA

  • Number of Pins

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Package Height

  • Package Length

  • Test Frequency

  • Contact Plating

  • Terminal Finish

  • Transistor Type

    NPN

  • Base Part Number

    BFS17

  • Supplier Package

  • Factory Lead Time

  • Power Dissipation

  • Terminal Position

    DUAL

  • Number of Elements

    1

  • Reference Standard

  • Voltage - Rated DC

    15V

  • Radiation Hardening

  • Qualification Status

    Not Qualified

  • Transition Frequency

    1300MHz

  • Element Configuration

    Single

  • Max Breakdown Voltage

  • Max Collector Current

    25mA

  • Max Power Dissipation

    330mW

  • Operating Temperature

    -55°C~150°CTJ

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Standard Package Name

  • Frequency - Transition

  • Gain Bandwidth Product

    1.3 GHz

  • Highest Frequency Band

    ULTRA HIGH FREQUENCY B

  • Number of Terminations

    3

  • Transistor Application

    AMPLIFIER

  • Minimum DC Current Gain

  • Supplier Device Package

  • Typical Power Gain (dB)

  • Maximum Noise Figure (dB)

  • Noise Figure (dB Typ @ f)

    4.5dB @ 500MHz

  • Emitter Base Voltage (VEBO)

    2.5V

  • Number of Elements per Chip

  • Operational Bias Conditions

  • Power Dissipation-Max (Abs)

  • Transistor Element Material

    SILICON

  • Continuous Collector Current

    25mA

  • Source Url Status Check Date

  • Collector Base Voltage (VCBO)

    25V

  • Minimum DC Current Gain Range

  • Peak Reflow Temperature (Cel)

  • Power Dissipation Ambient-Max

  • Collector-Base Capacitance-Max

    1.5pF

  • Current - Collector (Ic) (Max)

  • Maximum Power Dissipation (mW)

  • Typical Input Capacitance (pF)

  • Typical Output Capacitance (pF)

  • Collector Emitter Voltage (VCEO)

    15V

  • Maximum DC Collector Current (A)

  • Maximum Emitter Base Voltage (V)

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Maximum Collector Base Voltage (V)

  • Maximum Transition Frequency (MHz)

  • Collector Emitter Breakdown Voltage

    15V

  • Maximum Operating Temperature (°C)

  • Maximum Power 1dB Compression (dBm)

  • Minimum Operating Temperature (°C)

  • Collector Emitter Saturation Voltage

  • Maximum Emitter Cut-Off Current (nA)

  • Time@Peak Reflow Temperature-Max (s)

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    70 @ 2mA 1V

  • Maximum Collector-Emitter Voltage (V)

  • Maximum Collector Cut-Off Current (nA)

  • Maximum DC Collector Current Range (A)

  • Maximum 3rd Order Intercept Point (dBm)

  • Maximum Collector-Emitter Voltage Range (V)

  • Voltage - Collector Emitter Breakdown (Max)

  • Maximum Collector-Emitter Saturation Voltage (V)

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Qty

Unit Price

Total Price

25809

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