Details
Manufacturer No BFR193
Manufacturer Infineon Technologies AG
Category RF Small Signal Bipolar Transistors
Datasheet Datasheet
Description RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, TO-236, ROHS COMPLIANT PACKAGE-3
Price
Call
Type
Parameter
YTEOL
7
Objectid
1537697197
ECCN Code
EAR99
Pin Count
3
Risk Rank
7.16
Rohs Code
Yes
Pbfree Code
Yes
Subcategory
Other Transistors
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN
Part Package Code
SOT-23
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Source Content uid
BFR193
Number of Terminals
3
Package Description
SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Samacsys Description
Infineon BFR193 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23
Samacsys Modified On
2022-09-19 15:04:59
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
compliant
Samacsys Manufacturer
Infineon
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
100
Operating Temperature-Max
150°C
Collector Current-Max (IC)
0.08 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.4 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
8000 MHz
Collector-Base Capacitance-Max
1 pF
Send RFQ
Qty
Unit Price
Total Price
11087
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