Details
Manufacturer No BFG35,115
Manufacturer NXP USA Inc.
Category RF BJT Transistors
Package TO-261-4, TO-261AA
Datasheet Datasheet
Description
Price
Call
Type
Parameter
Gain
RoHS
yes
HTS Code
8541.29.00.75
ECCN Code
EAR99
Inventory
3580
Packaging
Tape & Reel (TR)
Pin Count
4
Published
1995
Part Status
Not For New Designs
Power - Max
1W
RoHS Status
ROHS3 Compliant
Subcategory
Other Transistors
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
JESD-609 Code
e3
Mounting Type
Surface Mount
Surface Mount
YES
Terminal Form
GULL WING
Package / Case
TO-261-4, TO-261AA
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
Transistor Type
NPN
Base Part Number
BFG35
Factory Lead Time
16 Weeks
Terminal Position
DUAL
Additional Feature
Number of Elements
1
Reference Standard
CECC
Qualification Status
Not Qualified
Transition Frequency
4000MHz
Operating Temperature
175°CTJ
Polarity/Channel Type
NPN
Reach Compliance Code
Frequency - Transition
4GHz
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Number of Terminations
4
Transistor Application
AMPLIFIER
Supplier Device Package
Noise Figure (dB Typ @ f)
Power Dissipation-Max (Abs)
1W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
1W
Collector-Base Capacitance-Max
Current - Collector (Ic) (Max)
150mA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 100mA 10V
Voltage - Collector Emitter Breakdown (Max)
18V
Send RFQ
Qty
Unit Price
Total Price
25440
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call
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