BF870

Details

Manufacturer No BF870

Manufacturer NXP Semiconductors

Category Power Bipolar Transistors

Datasheet Datasheet

Description TRANSISTOR 0.05 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power

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Type

Parameter

  • HTS Code

    8541.29.00.75

  • Objectid

    1438859466

  • ECCN Code

    EAR99

  • Risk Rank

    9.46

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE

  • JEDEC-95 Code

    TO-202

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • Case Connection

    COLLECTOR

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Source Content uid

    BF870

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    unknown

  • Transistor Application

    AMPLIFIER

  • DC Current Gain-Min (hFE)

    50

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    0.05 A

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    250 V

  • Power Dissipation Ambient-Max

    5 W

  • Transition Frequency-Nom (fT)

    60 MHz

  • Collector-Base Capacitance-Max

    2.2 pF

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Qty

Unit Price

Total Price

2016

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Substitute Products

BF872

NXP Semiconductors

TRANSISTOR 0.05 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-202, PLASTIC, TO-202, 3 PIN, BIP General Purpose Power

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NSDU52

National Semiconductor Corporation

TRANSISTOR,BJT,PNP,30V V(BR)CEO,2A I(C),TO-202AA

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S1298

Toshiba America Electronic Components

TRANSISTOR 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power

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NSD203

National Semiconductor Corporation

TRANSISTOR,BJT,PNP,45V V(BR)CEO,1.5A I(C),TO-202AA

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NSDU51

National Semiconductor Corporation

TRANSISTOR,BJT,PNP,30V V(BR)CEO,2A I(C),TO-202AA

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BD826

Continental Device India Ltd

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin

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BD828

Continental Device India Ltd

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin

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BD830

Continental Device India Ltd

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin

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BD840

Continental Device India Ltd

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin

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BD842

Continental Device India Ltd

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin

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BD844

Continental Device India Ltd

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin

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