Details
Manufacturer No BDW83-S
Manufacturer Bourns Inc.
Category Single BJT Transistors
Package TO-218-3
Datasheet Datasheet
Description
Price
Call
Type
Parameter
RoHS
yes
Mount
Through Hole
Width
Height
Length
Pbfree
Weight
hFE Min
HTS Code
Polarity
NPN
ECCN Code
EAR99
Inventory
7853
Lead Free
Packaging
Tube
Pin Count
3
Published
2011
REACH SVHC
VCEsat-Max
Part Status
Obsolete
Power - Max
3.5W
RoHS Status
ROHS3 Compliant
Subcategory
JESD-30 Code
Configuration
JESD-609 Code
e1
Mounting Type
Through Hole
Current Rating
Number of Pins
3
Package / Case
TO-218-3
Case Connection
COLLECTOR
Contact Plating
Terminal Finish
TIN SILVER COPPER
Transistor Type
NPN - Darlington
Base Part Number
BDW83
Power Dissipation
Terminal Position
SINGLE
Number of Elements
1
Voltage - Rated DC
Radiation Hardening
Qualification Status
Not Qualified
Element Configuration
Max Collector Current
15A
Max Power Dissipation
3.5W
Operating Temperature
-65°C~150°CTJ
Polarity/Channel Type
Reach Compliance Code
Number of Terminations
3
Transistor Application
SWITCHING
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
5V
Operating Temperature (Max)
Transistor Element Material
SILICON
Collector Base Voltage (VCBO)
45V
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Vce Saturation (Max) @ Ib, Ic
4V @ 150mA, 15A
Current - Collector (Ic) (Max)
Collector Emitter Voltage (VCEO)
4V
Current - Collector Cutoff (Max)
1mA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
2.5V
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 6A 3V
Voltage - Collector Emitter Breakdown (Max)
Send RFQ
Qty
Unit Price
Total Price
15174
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