Details
Manufacturer No BD649-S
Manufacturer Bourns Inc.
Category Single BJT Transistors
Package TO-220-3
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Through Hole
Width
4.7mm
Height
9.3mm
Length
10.4mm
Pbfree
Current
Voltage
hFE Min
750
Polarity
NPN
ECCN Code
EAR99
Inventory
17411
Packaging
Tube
Pin Count
3
Published
1993
Part Status
Obsolete
Power - Max
2W
RoHS Status
ROHS3 Compliant
JESD-30 Code
JEDEC-95 Code
TO-220AB
JESD-609 Code
e1
Mounting Type
Through Hole
Number of Pins
3
Package / Case
TO-220-3
Case Connection
COLLECTOR
Terminal Finish
TIN SILVER COPPER
Transistor Type
NPN - Darlington
Base Part Number
BD649
Power Dissipation
62.5W
Number of Elements
1
Radiation Hardening
No
Element Configuration
Single
Max Collector Current
8A
Max Power Dissipation
2W
Operating Temperature
-65°C~150°CTJ
Number of Terminations
3
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
5V
Transistor Element Material
SILICON
Collector Base Voltage (VCBO)
120V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 50mA, 5A
Current - Collector (Ic) (Max)
Collector Emitter Voltage (VCEO)
100V
Current - Collector Cutoff (Max)
500μA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Voltage - Collector Emitter Breakdown (Max)
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Qty
Unit Price
Total Price
16071
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