BD649-S

Details

Manufacturer No BD649-S

Manufacturer Bourns Inc.

Category Single BJT Transistors

Package TO-220-3

Datasheet Datasheet

Description

Price

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Type

Parameter

  • RoHS

    yes

  • Mount

    Through Hole

  • Width

    4.7mm

  • Height

    9.3mm

  • Length

    10.4mm

  • Pbfree

  • Current

  • Voltage

  • hFE Min

    750

  • Polarity

    NPN

  • ECCN Code

    EAR99

  • Inventory

    17411

  • Packaging

    Tube

  • Pin Count

    3

  • Published

    1993

  • Part Status

    Obsolete

  • Power - Max

    2W

  • RoHS Status

    ROHS3 Compliant

  • JESD-30 Code

  • JEDEC-95 Code

    TO-220AB

  • JESD-609 Code

    e1

  • Mounting Type

    Through Hole

  • Number of Pins

    3

  • Package / Case

    TO-220-3

  • Case Connection

    COLLECTOR

  • Terminal Finish

    TIN SILVER COPPER

  • Transistor Type

    NPN - Darlington

  • Base Part Number

    BD649

  • Power Dissipation

    62.5W

  • Number of Elements

    1

  • Radiation Hardening

    No

  • Element Configuration

    Single

  • Max Collector Current

    8A

  • Max Power Dissipation

    2W

  • Operating Temperature

    -65°C~150°CTJ

  • Number of Terminations

    3

  • Supplier Device Package

  • Max Operating Temperature

  • Min Operating Temperature

  • Emitter Base Voltage (VEBO)

    5V

  • Transistor Element Material

    SILICON

  • Collector Base Voltage (VCBO)

    120V

  • Vce Saturation (Max) @ Ib, Ic

    2.5V @ 50mA, 5A

  • Current - Collector (Ic) (Max)

  • Collector Emitter Voltage (VCEO)

    100V

  • Current - Collector Cutoff (Max)

    500μA

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Collector Emitter Breakdown Voltage

    100V

  • Collector Emitter Saturation Voltage

    2V

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    750 @ 3A 3V

  • Voltage - Collector Emitter Breakdown (Max)

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Qty

Unit Price

Total Price

16071

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