BCR166WE6327HTSA1

Details

Manufacturer No BCR166WE6327HTSA1

Manufacturer Infineon Technologies

Category Transistors - Bipolar (BJT) - Single, Pre-Biased

Package SC-70, SOT-323

Datasheet Datasheet

Description TRANS PREBIAS PNP 250MW SOT323-3

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Type

Parameter

  • Mfr

    Infineon Technologies

  • Series

    -

  • Package

    Tape & Reel (TR)

  • Power - Max

    250 mW

  • Mounting Type

    Surface Mount

  • Package / Case

    SC-70, SOT-323

  • Product Status

    Obsolete

  • Transistor Type

    PNP - Pre-Biased

  • Base Product Number

    BCR166

  • Resistor - Base (R1)

    4.7 kOhms

  • Frequency - Transition

    160 MHz

  • Supplier Device Package

    PG-SOT323

  • Resistor - Emitter Base (R2)

    47 kOhms

  • Vce Saturation (Max) @ Ib, Ic

    300mV @ 500µA, 10mA

  • Current - Collector (Ic) (Max)

    100 mA

  • Current - Collector Cutoff (Max)

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    70 @ 5mA, 5V

  • Voltage - Collector Emitter Breakdown (Max)

    50 V

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Qty

Unit Price

Total Price

8132

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Substitute Products

BCR166B6327HTSA1

Infineon Technologies AG

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

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BCR166F

Infineon Technologies AG

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TSFP-3

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BCR166T

Infineon Technologies AG

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-75, 3 PIN

Send RFQ

BCR166B6327

Infineon Technologies AG

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

Send RFQ
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