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BCR133B6327

Details

Manufacturer No BCR133B6327

Manufacturer Infineon Technologies AG

Category Small Signal Bipolar Transistors

Datasheet Datasheet

Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3

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Type

Parameter

  • ECCN Code

    EAR99

  • Rohs Code

    Yes

  • Popularity

    0

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

    SINGLE WITH BUILT-IN RESISTOR

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Terminal Position

    DUAL

  • Additional Feature

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    SMALL OUTLINE, R-PDSO-G3

  • Part Life Cycle Code

    Obsolete

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    compliant

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    30

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    0.1 A

  • Moisture Sensitivity Level

    1

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    50 V

  • Peak Reflow Temperature (Cel)

    260

  • Transition Frequency-Nom (fT)

    130 MHz

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Qty

Unit Price

Total Price

9449

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Substitute Products

BCR133E6327

Rochester Electronics LLC

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

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MMUN2211LT3

Motorola Semiconductor Products

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, TO-236AB, 3 PIN

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BCR133E6327XT

Infineon Technologies AG

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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MMUN2211LT1

Freescale Semiconductor

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-23

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