Details
Manufacturer No BCP69E6433
Manufacturer Infineon Technologies AG
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Price
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Type
Parameter
Objectid
1537693137
ECCN Code
EAR99
Risk Rank
8.77
Rohs Code
No
Subcategory
Other Transistors
JESD-30 Code
R-PSSO-G3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
BCP69E6433
Number of Terminals
3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Reach Compliance Code
not_compliant
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
85
Operating Temperature-Max
150°C
Collector Current-Max (IC)
1 A
Power Dissipation-Max (Abs)
1.5 W
Transistor Element Material
SILICON
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Qty
Unit Price
Total Price
956
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