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BC868TA

Details

Manufacturer No BC868TA

Manufacturer Diodes Incorporated

Category Single BJT Transistors

Datasheet Datasheet

Description

Price

$29.25955

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Type

Parameter

  • HTS

  • Mfr

  • Tab

  • PPAP

  • RoHS

  • SVHC

  • Type

  • Mount

    Surface Mount

  • RoHS:

  • Brand:

  • Pbfree

  • Series

  • EU RoHS

  • Package

  • Series:

  • hFE Min

  • Category

  • HTS Code

    8541.29.00.75

  • Mounting

  • Polarity

  • ECCN (US)

  • ECCN Code

    EAR99

  • Frequency

  • Inventory

    1222

  • Lead Free

    Contains Lead

  • Packaging

    Digi-Reel®

  • Pin Count

  • Published

    1997

  • Automotive

  • Packaging:

  • VCEsat-Max

  • PCB changed

  • Part Status

    Obsolete

  • Power - Max

  • RoHS Status

    Non-RoHS Compliant

  • Technology:

  • JESD-30 Code

    R-PSSO-F3

  • Subcategory:

  • Configuration

    SINGLE

  • JESD-609 Code

    e3

  • Manufacturer:

  • Mounting Type

    Surface Mount

  • Package Width

  • Product Type:

  • Surface Mount

  • Terminal Form

    FLAT

  • Current Rating

    1A

  • Number of Pins

  • Package / Case

    TO-243AA

  • Package Height

  • Package Length

  • Product Status

  • Case Connection

    COLLECTOR

  • Contact Plating

  • Terminal Finish

    MATTE TIN

  • Transistor Type

    NPN

  • Base Part Number

    BC868

  • Lifecycle Status

  • Supplier Package

  • Factory Lead Time

  • Power Dissipation

  • Product Category:

  • Terminal Position

    SINGLE

  • Additional Feature

  • Number of Elements

    1

  • Voltage - Rated DC

    20V

  • Radiation Hardening

  • Qualification Status

    Not Qualified

  • Transition Frequency

    60MHz

  • Element Configuration

  • Max Breakdown Voltage

    20V

  • Max Collector Current

    1A

  • Max Power Dissipation

    1W

  • Operating Temperature

    -65°C~150°CTJ

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Frequency - Transition

    60MHz

  • Gain Bandwidth Product

  • Number of Terminations

    3

  • Transistor Application

    AMPLIFIER

  • Minimum DC Current Gain

  • Supplier Device Package

  • Maximum Base Current (A)

  • Supplier Temperature Grade

  • Emitter Base Voltage (VEBO)

  • Number of Elements per Chip

  • Transistor Element Material

    SILICON

  • Collector Base Voltage (VCBO)

  • Peak Reflow Temperature (Cel)

    260

  • Vce Saturation (Max) @ Ib, Ic

    500mV @ 100mA, 1A

  • Collector-Base Capacitance-Max

  • Current - Collector (Ic) (Max)

  • Maximum Power Dissipation (mW)

  • Collector Emitter Voltage (VCEO)

    500mV

  • Current - Collector Cutoff (Max)

  • Maximum DC Collector Current (A)

  • Maximum Emitter Base Voltage (V)

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Maximum Collector Base Voltage (V)

  • Collector Emitter Breakdown Voltage

    60V

  • Maximum Operating Temperature (°C)

  • Minimum Operating Temperature (°C)

  • Collector Emitter Saturation Voltage

  • Operating Junction Temperature (°C)

  • Time@Peak Reflow Temperature-Max (s)

    40

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    85 @ 500mA 1V

  • Maximum Collector-Emitter Voltage (V)

  • Maximum Collector Cut-Off Current (nA)

  • Voltage - Collector Emitter Breakdown (Max)

    20V

  • Factory Pack Quantity:Factory Pack Quantity:

  • Maximum Collector-Emitter Saturation Voltage (V)

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Qty

Unit Price

Total Price

1

$28.38176

$28.38176

50

$26.91879

$1345.9395

100

$26.041

$2604.1

1000

$24.87062

$24870.62

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