Details
Manufacturer No BC858A-7-F
Manufacturer Diodes Incorporated
Category Single BJT Transistors
Package TO-236-3, SC-59, SOT-23-3
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Surface Mount
Width
1.4mm
Height
1mm
Length
3.05mm
Pbfree
yes
Weight
7.994566mg
hFE Min
ECCN Code
EAR99
Frequency
200MHz
Inventory
13104
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
3
Published
2003
REACH SVHC
No SVHC
Part Status
Active
Power - Max
300mW
RoHS Status
ROHS3 Compliant
Subcategory
Other Transistors
Termination
JESD-30 Code
Configuration
JESD-609 Code
e3
Max Frequency
Mounting Type
Surface Mount
Surface Mount
Terminal Form
GULL WING
Current Rating
Number of Pins
3
Package / Case
TO-236-3, SC-59, SOT-23-3
Contact Plating
Tin
Terminal Finish
Transistor Type
PNP
Base Part Number
BC858
Factory Lead Time
19 Weeks
Power Dissipation
350mW
Terminal Position
DUAL
Number of Elements
1
Voltage - Rated DC
Radiation Hardening
Qualification Status
Not Qualified
Transition Frequency
200MHz
Element Configuration
Single
Max Breakdown Voltage
Max Collector Current
100mA
Max Power Dissipation
300mW
Operating Temperature
-65°C~150°CTJ
Polarity/Channel Type
PNP
Reach Compliance Code
Frequency - Transition
Gain Bandwidth Product
200MHz
Number of Terminations
3
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
Collector Current-Max (IC)
Emitter Base Voltage (VEBO)
5V
Operating Temperature (Max)
Power Dissipation-Max (Abs)
Transistor Element Material
SILICON
Collector Base Voltage (VCBO)
30V
Max Junction Temperature (Tj)
Peak Reflow Temperature (Cel)
260
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector (Ic) (Max)
Collector Emitter Voltage (VCEO)
30V
Current - Collector Cutoff (Max)
15nA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-650mV
Time@Peak Reflow Temperature-Max (s)
40
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Voltage - Collector Emitter Breakdown (Max)
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Qty
Unit Price
Total Price
14381
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