BC817-40-Q

Details

Manufacturer No BC817-40-Q

Manufacturer Diodes Incorporated

Category Single BJT Transistors

Datasheet Datasheet

Description

Price

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Type

Parameter

  • HTS

  • PPAP

    No

  • RoHS

  • Type

    NPN

  • Mount

  • RoHS:

  • Width

  • Brand:

  • Height

  • Length

  • Pbfree

  • Series

  • Weight

  • Current

  • EU RoHS

    Compliant

  • Package

  • Series:

  • Voltage

  • hFE Min

  • Category

    Bipolar Small Signal

  • Material

    Si

  • Mounting

    Surface Mount

  • Polarity

  • ECCN (US)

    EAR99

  • ECCN Code

  • Frequency

  • Inventory

    In Stock

  • Lead Free

  • Packaging

    Tape and Reel

  • Pin Count

    3

  • Published

  • Automotive

    No

  • Lead Shape

  • Packaging:

  • REACH SVHC

  • VCEsat-Max

  • PCB changed

    3

  • Part Status

    Active

  • Power - Max

  • RoHS Status

  • Subcategory

  • Technology:

  • JESD-30 Code

  • Subcategory:

  • Unit Weight:

  • Configuration

    Single

  • JEDEC-95 Code

  • JESD-609 Code

  • Manufacturer:

  • Mounting Type

  • Package Width

    1.3

  • Product Type:

  • Surface Mount

  • Terminal Form

  • Configuration:

  • Current Rating

  • Number of Pins

  • Package / Case

  • Package Length

    2.9

  • Qualification:

  • Contact Plating

  • Mounting Style:

  • Package / Case:

  • Part # Aliases:

  • Terminal Finish

  • Transistor Type

  • Base Part Number

  • Supplier Package

    SOT-23

  • Factory Lead Time

  • Power Dissipation

  • Product Category:

  • Terminal Position

  • Number of Elements

  • Reference Standard

  • Voltage - Rated DC

  • Radiation Hardening

  • Qualification Status

  • Transistor Polarity:

  • Transition Frequency

  • Element Configuration

  • Max Breakdown Voltage

  • Max Collector Current

  • Max Power Dissipation

  • Operating Temperature

  • Polarity/Channel Type

  • Reach Compliance Code

  • Standard Package Name

  • Frequency - Transition

  • Gain Bandwidth Product

  • Number of Terminations

  • Transistor Application

  • Minimum DC Current Gain

    250@100mA@1V|40@500mA@1V

  • Pd - Power Dissipation:

  • Supplier Device Package

  • DC Current Gain hFE Max:

  • DC Current Gain-Min (hFE)

  • Max Operating Temperature

  • Min Operating Temperature

  • Collector Current-Max (IC)

  • Gain Bandwidth Product fT:

  • Supplier Temperature Grade

    Automotive

  • Emitter Base Voltage (VEBO)

  • Emitter- Base Voltage VEBO:

  • Number of Elements per Chip

    1

  • Operating Temperature (Max)

  • Operating Temperature (Min)

  • Power Dissipation-Max (Abs)

  • Transistor Element Material

  • Collector Base Voltage (VCBO)

  • Collector- Base Voltage VCBO:

  • Collector-Emitter Voltage-Max

  • Continuous Collector Current:

  • Maximum DC Collector Current:

  • Peak Reflow Temperature (Cel)

  • Vce Saturation (Max) @ Ib, Ic

  • Current - Collector (Ic) (Max)

  • Maximum Operating Temperature:

  • Maximum Power Dissipation (mW)

    310

  • Minimum Operating Temperature:

  • DC Collector/Base Gain hfe Min:

  • Collector Emitter Voltage (VCEO)

  • Current - Collector Cutoff (Max)

  • Maximum DC Collector Current (A)

    0.8

  • Maximum Emitter Base Voltage (V)

    5

  • Moisture Sensitivity Level (MSL)

  • Maximum Collector Base Voltage (V)

  • Maximum Transition Frequency (MHz)

  • Collector Emitter Breakdown Voltage

  • Maximum Operating Temperature (°C)

    150

  • Minimum Operating Temperature (°C)

    -55

  • Collector- Emitter Voltage VCEO Max:

  • Time@Peak Reflow Temperature-Max (s)

  • Collector-Emitter Saturation Voltage:

  • DC Current Gain (hFE) (Min) @ Ic, Vce

  • Maximum Collector-Emitter Voltage (V)

    45

  • Maximum Collector Cut-Off Current (nA)

    100

  • Maximum Base Emitter Saturation Voltage (V)

    1.3@50mA@500mA

  • Voltage - Collector Emitter Breakdown (Max)

  • Factory Pack Quantity:Factory Pack Quantity:

  • Maximum Collector-Emitter Saturation Voltage (V)

    0.7@50mA@500mA

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Qty

Unit Price

Total Price

14334

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