BC807-25-7

Details

Manufacturer No BC807-25-7

Manufacturer Diodes Incorporated

Category Single BJT Transistors

Datasheet Datasheet

Description

Price

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Type

Parameter

  • RoHS

  • Mount

    Surface Mount

  • RoHS:

  • Width

    1.4mm

  • Brand:

  • Height

    1mm

  • Length

    3.05mm

  • Pbfree

  • Series

  • Weight

    7.994566mg

  • Package

  • hFE Min

    160

  • HTS Code

  • Polarity

  • ECCN Code

    EAR99

  • Frequency

  • HTS Code:

  • Inventory

    2892

  • Lead Free

    Contains Lead

  • Packaging

    Tape & Reel (TR)

  • Pin Count

    3

  • Published

    2008

  • ECCN Code:

  • Packaging:

  • Pin Count:

  • REACH SVHC

    No SVHC

  • Risk Rank:

  • Rohs Code:

  • VCEsat-Max

    0.7 V

  • Part Status

    Discontinued

  • Power - Max

    310mW

  • RoHS Status

    Non-RoHS Compliant

  • Subcategory

    Other Transistors

  • Technology:

  • JESD-30 Code

  • Subcategory:

  • Configuration

  • JEDEC-95 Code

  • JESD-30 Code:

  • JESD-609 Code

    e0

  • Manufacturer:

  • Mounting Type

    Surface Mount

  • Product Type:

  • Surface Mount

  • Terminal Form

    GULL WING

  • Configuration:

  • JESD-609 Code:

  • Number of Pins

    3

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Package Shape:

  • Package Style:

  • Qualification:

  • Surface Mount:

  • Terminal Form:

  • Contact Plating

  • Mounting Style:

  • Package / Case:

  • Part # Aliases:

  • Terminal Finish

    Tin/Lead (Sn85Pb15)

  • Transistor Type

    PNP

  • Base Part Number

    BC807

  • Terminal Finish:

  • Factory Lead Time

  • Ihs Manufacturer:

  • Power Dissipation

  • Product Category:

  • Terminal Position

    DUAL

  • Additional Feature

  • Number of Elements

    1

  • Part Package Code:

  • Reference Standard

  • Terminal Position:

  • Number of Elements:

  • Radiation Hardening

  • Number of Terminals:

  • Package Description:

  • Qualification Status

    Not Qualified

  • Transistor Polarity:

  • Transition Frequency

    100MHz

  • Element Configuration

    Single

  • Max Breakdown Voltage

    45V

  • Max Collector Current

    500mA

  • Max Power Dissipation

    310mW

  • Operating Temperature

    -55°C~150°CTJ

  • Part Life Cycle Code:

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    not_compliant

  • Frequency - Transition

  • Gain Bandwidth Product

    100MHz

  • Number of Terminations

    3

  • Package Body Material:

  • Reach Compliance Code:

  • Transistor Application

    SWITCHING

  • Pd - Power Dissipation:

  • DC Current Gain hFE Max:

  • Manufacturer Part Number:

  • Gain Bandwidth Product fT:

  • Operating Temperature-Max:

  • Emitter Base Voltage (VEBO)

    5V

  • Emitter- Base Voltage VEBO:

  • Power Dissipation-Max (Abs)

  • Transistor Element Material

    SILICON

  • Collector Base Voltage (VCBO)

  • Collector- Base Voltage VCBO:

  • Continuous Collector Current:

  • Maximum DC Collector Current:

  • Peak Reflow Temperature (Cel)

    235

  • Vce Saturation (Max) @ Ib, Ic

    700mV @ 50mA, 500mA

  • Collector-Base Capacitance-Max

    12pF

  • Current - Collector (Ic) (Max)

  • Maximum Operating Temperature:

  • Minimum Operating Temperature:

  • Peak Reflow Temperature (Cel):

  • DC Collector/Base Gain hfe Min:

  • Collector Emitter Voltage (VCEO)

    700mV

  • Current - Collector Cutoff (Max)

    100nA

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Collector Emitter Breakdown Voltage

    45V

  • Collector Emitter Saturation Voltage

  • Collector- Emitter Voltage VCEO Max:

  • Time@Peak Reflow Temperature-Max (s)

    10

  • Collector-Emitter Saturation Voltage:

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    160 @ 100mA 1V

  • Voltage - Collector Emitter Breakdown (Max)

  • Factory Pack Quantity:Factory Pack Quantity:

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Qty

Unit Price

Total Price

14312

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