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BA1L4Z-P
Details
Manufacturer No BA1L4Z-P
Manufacturer Renesas Electronics Corporation
Category Small Signal Bipolar Transistors
Datasheet Datasheet
Description 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
Price
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Type
Parameter
YTEOL
5.85
Objectid
1801221622
ECCN Code
EAR99
Risk Rank
7.3
Subcategory
BIP General Purpose Small Signal
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
BA1L4Z-P
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
compliant
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
200 ns
Turn-off Time-Max (toff)
6000 ns
DC Current Gain-Min (hFE)
200
Operating Temperature-Max
150°C
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.25 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
50 V
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Qty
Unit Price
Total Price
18660
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