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7N65L-T2Q-T

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Manufacturer No 7N65L-T2Q-T

Manufacturer Unisonic Technologies Co Ltd

Category RF Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 7.4A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

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Type

Parameter

  • YTEOL

    6.2

  • Objectid

    1027642933

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Risk Rank

    6.9

  • Rohs Code

    Yes

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSIP-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-262AA

  • Package Shape

    RECTANGULAR

  • Package Style

    IN-LINE

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Part Package Code

    TO-262AA

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    TO-262, 3 PIN

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    7.4 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    650 V

  • Power Dissipation-Max (Abs)

    142 W

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    530 mJ

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Drain-source On Resistance-Max

    1.2 Ω

  • Pulsed Drain Current-Max (IDM)

    29.6 A

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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Unit Price

Total Price

5580

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