2SK3354-Z-AZ

Details

Manufacturer No 2SK3354-Z-AZ

Manufacturer Renesas Electronics Corporation

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Nch Single Power Mosfet 60V 83A 0.008Mohm Mp-25Z/To-220Smd, MP-25Z, /Bag

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Type

Parameter

Objectid

1819301480
ECCN Code

EAR99
Pin Count

3
Risk Rank

9.16
Rohs Code

Yes
Brand Name

Renesas
Pbfree Code

Yes
Subcategory

FET General Purpose Power
JESD-30 Code

R-PSSO-G2
Configuration

SINGLE WITH BUILT-IN DIODE
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
FET Technology

METAL-OXIDE SEMICONDUCTOR
Operating Mode

ENHANCEMENT MODE
Case Connection

DRAIN
Part Package Code

MP-25Z
Terminal Position

SINGLE
Number of Elements

1
Source Content uid

2SK3354-Z-AZ
Number of Terminals

2
Package Description

SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code

Obsolete
Qualification Status

Not Qualified
Samacsys Description

Nch Single Power Mosfet 60V 83A 0.008Mohm Mp-25Z/To-220Smd
Samacsys Modified On

2022-04-28 13:17:55
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Reach Compliance Code

compliant
Samacsys Manufacturer

Renesas Electronics
Drain Current-Max (ID)

83 A
Transistor Application

SWITCHING
DS Breakdown Voltage-Min

60 V
Manufacturer Package Code

PRSS0004AJ-B3
Operating Temperature-Max

150°C
Power Dissipation-Max (Abs)

100 W
Transistor Element Material

SILICON
Drain Current-Max (Abs) (ID)

83 A
Avalanche Energy Rating (Eas)

302 mJ
Peak Reflow Temperature (Cel)

260
Drain-source On Resistance-Max

0.012 Ω
Pulsed Drain Current-Max (IDM)

332 A
Time@Peak Reflow Temperature-Max (s)

10

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Qty

Unit Price

Total Price

4568

call

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