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2SD664

Details

Manufacturer No 2SD664

Manufacturer Toshiba America Electronic Components

Category Other Transistors

Datasheet Datasheet

Description TRANSISTOR,BJT,DARLINGTON,NPN,80V V(BR)CEO,7A I(C),TO-66

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Type

Parameter

  • Objectid

    101553121

  • ECCN Code

    EAR99

  • Risk Rank

    7.97

  • Rohs Code

    No

  • Subcategory

    Other Transistors

  • Configuration

    DARLINGTON

  • JESD-609 Code

    e0

  • Surface Mount

    NO

  • Terminal Finish

    Tin/Lead (Sn/Pb)

  • Source Content uid

    2SD664

  • Package Description

    ,

  • Part Life Cycle Code

    Active

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • DC Current Gain-Min (hFE)

    2000

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    7 A

  • Power Dissipation-Max (Abs)

    40 W

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Qty

Unit Price

Total Price

2243

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2N6301

Mospec Semiconductor Corp

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2N6295

Central Semiconductor Corp

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NTE274

NTE Electronics Inc

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2SD684

Toshiba America Electronic Components

TRANSISTOR,BJT,DARLINGTON,NPN,300V V(BR)CEO,6A I(C),TO-66

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2SD684A

Toshiba America Electronic Components

TRANSISTOR,BJT,DARLINGTON,NPN,400V V(BR)CEO,6A I(C),TO-66

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2N6300

Central Semiconductor Corp

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

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2N6301

Central Semiconductor Corp

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

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2N6294

Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

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2N6301TIN/LEAD

Central Semiconductor Corp

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2N6300PBFREE

Central Semiconductor Corp

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2N6301PBFREE

Central Semiconductor Corp

Power Bipolar Transistor,

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