Details
Manufacturer No 2SD2636
Manufacturer Toshiba America Electronic Components
Category Power Bipolar Transistors
Datasheet Datasheet
Description TRANSISTOR 8 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power
Price
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Type
Parameter
YTEOL
.4
Objectid
2067205105
ECCN Code
EAR99
Pin Count
3
Risk Rank
9.12
Subcategory
Other Transistors
JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON WITH BUILT-IN RESISTOR
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
2SD2636
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Lifetime Buy
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
5000
Operating Temperature-Max
150°C
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
100 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
160 V
Transition Frequency-Nom (fT)
35 MHz
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Qty
Unit Price
Total Price
3655
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