Details
Manufacturer No 2SD2387A
Manufacturer Toshiba America Electronic Components
Category Power Bipolar Transistors
Datasheet Datasheet
Description TRANSISTOR 8 A, 140 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
Price
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Type
Parameter
YTEOL
7.2
Objectid
1467516021
ECCN Code
EAR99
Risk Rank
7.39
Rohs Code
No
Pbfree Code
No
Subcategory
Other Transistors
JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
2SD2387A
Number of Terminals
3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
5000
Operating Temperature-Max
150°C
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
80 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
140 V
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Transition Frequency-Nom (fT)
30 MHz
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Qty
Unit Price
Total Price
1410
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