Details
Manufacturer No 2SD1506/R
Manufacturer ROHM Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Price
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Type
Parameter
HTS Code
8541.29.00.75
Objectid
1447983069
ECCN Code
EAR99
Risk Rank
9.49
VCEsat-Max
1 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-126
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
compliant
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
180
Operating Temperature-Max
150°C
Collector Current-Max (IC)
3 A
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
50 V
Power Dissipation Ambient-Max
10 W
Transition Frequency-Nom (fT)
90 MHz
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Unit Price
Total Price
3676
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