Details
Manufacturer No 2SC4957-A
Manufacturer CEL
Category RF BJT Transistors
Package TO-253-4, TO-253AA
Datasheet Datasheet
Description
Price
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Type
Parameter
Gain
11dB
RoHS
yes
Mount
Surface Mount
Width
Height
Length
Pbfree
Series
hFE Min
HTS Code
Polarity
ECCN Code
Frequency
Inventory
4245
Lead Free
Packaging
Strip
Pin Count
Published
REACH SVHC
Part Status
Obsolete
Power - Max
180mW
RoHS Status
RoHS Compliant
Subcategory
JESD-30 Code
Output Power
Configuration
JESD-609 Code
Max Frequency
Mounting Type
Surface Mount
Surface Mount
Terminal Form
Current Rating
Number of Pins
Package / Case
TO-253-4, TO-253AA
Power - Output
Contact Plating
Terminal Finish
Transistor Type
NPN
Base Part Number
Lifecycle Status
Factory Lead Time
Power Dissipation
Terminal Position
Additional Feature
Number of Elements
Voltage - Rated DC
Radiation Hardening
Qualification Status
Transition Frequency
Element Configuration
Max Breakdown Voltage
Max Collector Current
30mA
Max Power Dissipation
180mW
Operating Temperature
150°CTJ
Polarity/Channel Type
Power Dissipation-Max
Reach Compliance Code
Frequency - Transition
12GHz
Gain Bandwidth Product
Highest Frequency Band
Number of Terminations
Transistor Application
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Noise Figure (dB Typ @ f)
1.5dB @ 2GHz
Emitter Base Voltage (VEBO)
Transistor Element Material
Continuous Collector Current
Collector Base Voltage (VCBO)
Peak Reflow Temperature (Cel)
Collector-Base Capacitance-Max
Current - Collector (Ic) (Max)
30mA
Collector Emitter Voltage (VCEO)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
6V
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 10mA 3V
Voltage - Collector Emitter Breakdown (Max)
6V
Send RFQ
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Unit Price
Total Price
7375
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