Details
Manufacturer No 2SC2798
Manufacturer Mitsubishi Electric
Category RF Power Bipolar Transistors
Datasheet Datasheet
Description RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Price
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Type
Parameter
HTS Code
8541.29.00.75
Objectid
1438864394
ECCN Code
EAR99
Risk Rank
9.49
Subcategory
Other Transistors
JESD-30 Code
R-CQPM-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
POST/STUD MOUNT
Surface Mount
YES
Terminal Form
FLAT
Case Connection
ISOLATED
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Package Description
POST/STUD MOUNT, R-CQPM-F4
Power Gain-Min (Gp)
6 dB
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
175°C
Collector Current-Max (IC)
2 A
Power Dissipation-Max (Abs)
30 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
35 V
Power Dissipation Ambient-Max
30 W
Send RFQ
Qty
Unit Price
Total Price
2107
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