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2SB1430-M

Details

Manufacturer No 2SB1430-M

Manufacturer Renesas Electronics Corporation

Category Power Bipolar Transistors

Datasheet Datasheet

Description 5A, 100V, PNP, Si, POWER TRANSISTOR

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Type

Parameter

  • Objectid

    1800830451

  • ECCN Code

    EAR99

  • Risk Rank

    8.87

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • Case Connection

    ISOLATED

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Source Content uid

    2SB1430-M

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    unknown

  • Transistor Application

    AMPLIFIER

  • DC Current Gain-Min (hFE)

    2000

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    5 A

  • Power Dissipation-Max (Abs)

    20 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    100 V

  • Transition Frequency-Nom (fT)

    80 MHz

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Qty

Unit Price

Total Price

2369

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