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2SB1180P

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Manufacturer No 2SB1180P

Manufacturer Panasonic Electronic Components

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, I-G1, 4 PIN

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Type

Parameter

  • Objectid

    1969268979

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Risk Rank

    9.49

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Terminal Position

    DUAL

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    SMALL OUTLINE, R-PDSO-G3

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    unknown

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    4000

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    8 A

  • Power Dissipation-Max (Abs)

    1.3 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    60 V

  • Transition Frequency-Nom (fT)

    20 MHz

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Total Price

3575

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2SB1179A

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