2SA747

Details

Manufacturer No 2SA747

Manufacturer NJS

Category PNP

Datasheet Datasheet

Description Trans GP BJT PNP 50V 2A 3-Pin(3+Tab) TO-220AB

Price

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Type

Parameter

Type

PNP
Category

Bipolar Power
Material

Si
Configuration

Single
Maximum Power Dissipation

15000mW
Maximum DC Collector Current

2A
Maximum Emitter Base Voltage

5V
Maximum Transition Frequency

120(Typ)MHz
Maximum Operating Temperature

150°C
Maximum Collector Base Voltage

70V
Maximum Collector Emitter Voltage

50V
Maximum Collector Emitter Saturation Voltage

1@100mA@1AV

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Qty

Unit Price

Total Price

22484

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Substitute Products

MJ15023G

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2N4902

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2N4399

Solitron Devices Inc

Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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2N3171

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SDT3877

Solitron Devices Inc

Power Bipolar Transistor, 20A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

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SDT3876

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2N3026

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2N6246

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SDT3758

Solitron Devices Inc

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

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2N5627

API Technologies Corp

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

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2N4398

Solitron Devices Inc

Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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SDT3826

Solitron Devices Inc

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

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BLX82

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2N3025

API Technologies Corp

Power Bipolar Transistor, 5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

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2N3791

Solitron Devices Inc

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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2N5741

Solitron Devices Inc

Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

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2N4905

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Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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