Details
Manufacturer No 2SA1939-R
Manufacturer Toshiba America Electronic Components
Category Power Bipolar Transistors
Datasheet Datasheet
Description TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power
Price
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Type
Parameter
HTS Code
8541.29.00.95
Objectid
1431202607
ECCN Code
EAR99
Pin Count
3
Risk Rank
9.77
Rohs Code
No
VCEsat-Max
2 V
Subcategory
Other Transistors
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
2SA1939-R
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Reach Compliance Code
unknown
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
55
Operating Temperature-Max
150°C
Collector Current-Max (IC)
6 A
Power Dissipation-Max (Abs)
60 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
80 V
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Power Dissipation Ambient-Max
60 W
Transition Frequency-Nom (fT)
30 MHz
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Unit Price
Total Price
6025
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