2SA1162-GR(F)

Details

Manufacturer No 2SA1162-GR(F)

Manufacturer Toshiba America Electronic Components

Category Small Signal Bipolar Transistors

Datasheet Datasheet

Description 150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR

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Type

Parameter

Objectid

2022073265
ECCN Code

EAR99
Risk Rank

9.6
Rohs Code

Yes
VCEsat-Max

0.3 V
Subcategory

Other Transistors
JESD-30 Code

R-PDSO-G3
Configuration

SINGLE
JEDEC-95 Code

TO-236
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
Terminal Position

DUAL
Additional Feature

LOW NOISE
Number of Elements

1
Source Content uid

2SA1162-GR(F)
Number of Terminals

3
Package Description

SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code

Obsolete
Samacsys Description

Transistor Toshiba 2SA1162-GR(F) PNP Bipolar Transistor, 0.15 A, 50 V, 3-Pin SC-59
Samacsys Modified On

2023-03-07 16:10:32
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

PNP
Reach Compliance Code

unknown
Samacsys Manufacturer

Toshiba
Transistor Application

AMPLIFIER
DC Current Gain-Min (hFE)

200
Operating Temperature-Max

125°C
Collector Current-Max (IC)

0.15 A
Power Dissipation-Max (Abs)

0.15 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

50 V
Peak Reflow Temperature (Cel)

NOTSPECIFIED
Transition Frequency-Nom (fT)

80 MHz
Collector-Base Capacitance-Max

7 pF
Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

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Unit Price

Total Price

17736

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