RoHS

yes

Mount

Width

Height

Length

Pbfree

Weight

hFE Min

HTS Code

8541.21.00.95

Polarity

ECCN Code

EAR99

Frequency

Inventory

17472

Lead Free

Packaging

Tape & Box (TB)

Pin Count

3

Published

1999

REACH SVHC

VCEsat-Max

0.3 V

Part Status

Obsolete

Power - Max

500mW

RoHS Status

ROHS3 Compliant

Subcategory

Other Transistors

JESD-30 Code

O-PBCY-T3

Configuration

SINGLE

JESD-609 Code

e3

Max Frequency

Mounting Type

Through Hole

Surface Mount

NO

Terminal Form

Current Rating

Number of Pins

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Case Connection

Contact Plating

Terminal Finish

Matte Tin (Sn)

Transistor Type

PNP

Base Part Number

Factory Lead Time

Power Dissipation

Terminal Position

BOTTOM

Additional Feature

Number of Elements

1

Voltage - Rated DC

Radiation Hardening

Qualification Status

Not Qualified

Transition Frequency

80MHz

Element Configuration

Max Breakdown Voltage

Max Collector Current

Max Power Dissipation

Operating Temperature

150°CTJ

Polarity/Channel Type

PNP

Reach Compliance Code

Frequency - Transition

80MHz

Gain Bandwidth Product

Number of Terminations

3

Transistor Application

SWITCHING

Supplier Device Package

Emitter Base Voltage (VEBO)

Operating Temperature (Max)

Power Dissipation-Max (Abs)

0.5W

Transistor Element Material

SILICON

Continuous Collector Current

Collector Base Voltage (VCBO)

Peak Reflow Temperature (Cel)

NOTSPECIFIED

Vce Saturation (Max) @ Ib, Ic

300mV @ 10mA, 100mA

Collector-Base Capacitance-Max

7pF

Current - Collector (Ic) (Max)

150mA

Collector Emitter Voltage (VCEO)

Current - Collector Cutoff (Max)

100nA ICBO

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 2mA 6V

Voltage - Collector Emitter Breakdown (Max)

50V