2N6231E3

Details

Manufacturer No 2N6231E3

Manufacturer Microsemi FPGA & SoC

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

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Type

Parameter

Objectid

8059220543
ECCN Code

EAR99
Risk Rank

9.14
JESD-30 Code

O-MBFM-P2
JEDEC-95 Code

TO-3
Package Shape

ROUND
Package Style

FLANGE MOUNT
Surface Mount

NO
Terminal Form

PIN/PEG
Terminal Position

BOTTOM
Number of Terminals

2
Package Description

FLANGE MOUNT, O-MBFM-P2
Part Life Cycle Code

Obsolete
Package Body Material

METAL
Polarity/Channel Type

PNP
Reach Compliance Code

compliant
DC Current Gain-Min (hFE)

15
Collector Current-Max (IC)

10 A
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

140 V

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Qty

Unit Price

Total Price

1808

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Microchip Technology Inc

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TT Electronics Resistors

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Solitron Devices Inc

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API Technologies Corp

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Solid State Devices Inc (SSDI)

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Advanced Semiconductor Inc

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Fairchild Semiconductor Corporation

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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Vishay Intertechnologies

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TT Electronics Power and Hybrid / Semelab Limited

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Silicon Transistor Corporation

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Thales Group

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International Rectifier

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Intersil Corporation

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ON Semiconductor

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Space Power Electronics Inc

Power Bipolar Transistor, 15A I(C), 300V V(BR)CEO, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN

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STMicroelectronics

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TT Electronics Power and Hybrid / Semelab Limited

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