2N6044

Details

Manufacturer No 2N6044

Manufacturer NJS

Category 达林顿晶体管

Datasheet Datasheet

Description Trans Darlington NPN 80V 10A 3-Pin(3+Tab) TO-220 Box

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Type

Parameter

Type

NPN
Configuration

Single
Minimum DC Current Gain

1000@4A@4V|100@8A@4V
Number of Elements per Chip

1
Maximum Emitter Base Voltage

5V
Maximum Operating Temperature

150°C
Minimum Operating Temperature

-65°C
Maximum Collector Base Voltage

80V
Typical Current Gain Bandwidth

4(Min)MHz
Maximum Collector Emitter Voltage

80V
Maximum Base Emitter Saturation Voltage

4.5@80mA@8AV
Maximum Continuous DC Collector Current

10A

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Qty

Unit Price

Total Price

19175

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Substitute Products

2N6044-6263

Harris Semiconductor

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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2N6044-6255

Harris Semiconductor

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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2N6044-6203

Intersil Corporation

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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2N6044-DR6280

Intersil Corporation

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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2N6044-DR6274

Intersil Corporation

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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2N6044-DR6260

Intersil Corporation

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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2N6044-6265

Harris Semiconductor

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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2N6044-6261

Intersil Corporation

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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2N6044-6258

Intersil Corporation

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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2N6044-6226

Intersil Corporation

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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2N6044-6200

Harris Semiconductor

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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