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2N5626E3

Details

Manufacturer No 2N5626E3

Manufacturer Microsemi FPGA & SoC

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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Type

Parameter

  • Objectid

    8059220420

  • ECCN Code

    EAR99

  • Risk Rank

    9.15

  • JESD-30 Code

    O-MBFM-P2

  • JEDEC-95 Code

    TO-3

  • Package Shape

    ROUND

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    PIN/PEG

  • Terminal Position

    BOTTOM

  • Number of Terminals

    2

  • Package Description

    FLANGE MOUNT, O-MBFM-P2

  • Part Life Cycle Code

    Obsolete

  • Package Body Material

    METAL

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    compliant

  • DC Current Gain-Min (hFE)

    70

  • Collector Current-Max (IC)

    10 A

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    80 V

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Unit Price

Total Price

3768

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Substitute Products

2N5626

Solitron Devices Inc

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

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2N5626

API Technologies Corp

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

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2N5626

Silicon Transistor Corporation

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin

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2N5626

Microsemi FPGA & SoC

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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