Details
Manufacturer No 2N4407TIN/LEAD
Manufacturer Central Semiconductor Corp
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor,
Price
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Type
Parameter
HTS Code
8541.29.00.75
Objectid
8307691791
ECCN Code
EAR99
Risk Rank
9.47
Rohs Code
No
VCEsat-Max
1.5 V
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL
Surface Mount
NO
Terminal Form
WIRE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Part Life Cycle Code
Obsolete
Package Body Material
METAL
Polarity/Channel Type
PNP
Reach Compliance Code
not_compliant
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
200°C
Operating Temperature-Min
-65°C
Collector Current-Max (IC)
2 A
Power Dissipation-Max (Abs)
8.75 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
80 V
Power Dissipation Ambient-Max
1.25 W
Transition Frequency-Nom (fT)
50 MHz
Collector-Base Capacitance-Max
50 pF
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Qty
Unit Price
Total Price
3346
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