2DB1182Q-13

Details

Manufacturer No 2DB1182Q-13

Manufacturer Diodes Incorporated

Category Bipolar Transistors - BJT

Package TO-252-3

Datasheet Datasheet

Description Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A

Price

$0.48

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Type

Parameter

RoHS

Details
Brand

Diodes Incorporated
Series

2DB11
Packaging

MouseReel
Technology

Si
Subcategory

Transistors
Unit Weight

0.011640 oz
Manufacturer

Diodes Incorporated
Product Type

BJTs - Bipolar Transistors
Configuration

Single
Qualification

AEC-Q101
Mounting Style

SMD/SMT
Package / Case

TO-252-3
Product Category

Bipolar Transistors - BJT
Transistor Polarity

PNP
Pd - Power Dissipation

10 W
DC Current Gain hFE Max

270 at - 500 mA, - 3 V
Gain Bandwidth Product fT

110 MHz
Emitter- Base Voltage VEBO

5 V
Collector- Base Voltage VCBO

40 V
Maximum DC Collector Current

3 A
Maximum Operating Temperature

150°C
Minimum Operating Temperature

-55°C
DC Collector/Base Gain hfe Min

120
Collector- Emitter Voltage VCEO Max

32 V
Collector-Emitter Saturation Voltage

800 mV
Factory Pack Quantity: Factory Pack Quantity

2500

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Qty

Unit Price

Total Price

$0.4656

$0.4416

$22.08

100

$0.4272

$42.72

1000

$0.408

$408

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2DB1184Q-13

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