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20N60L-T47-T
Details
Manufacturer No 20N60L-T47-T
Manufacturer Unisonic Technologies Co Ltd
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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Type
Parameter
YTEOL
6
Objectid
1153563651
ECCN Code
EAR99
Risk Rank
6.97
Rohs Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
20 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
370 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
20 A
Avalanche Energy Rating (Eas)
1200 mJ
Drain-source On Resistance-Max
0.45 Ω
Pulsed Drain Current-Max (IDM)
80 A
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Total Price
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