1N649

Details

Manufacturer No 1N649

Manufacturer NJS

Category 普通整流二极管

Datasheet Datasheet

Description SILICON GENERAL PURPOSE DIODE

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Type

Parameter

Configuration

Single
Peak Forward Voltage

1V
Peak Reverse Current

0.2uA
Maximum Power Dissipation

600mW
Maximum Operating Temperature

175°C
Minimum Operating Temperature

-65°C
Operating Junction Temperature

-65to175°C
Peak Reverse Repetitive Voltage

600V
Peak Non-Repetitive Surge Current

3A
Maximum Continuous Forward Current

0.4A

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Qty

Unit Price

Total Price

389

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JANTXV1N645

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1N648

Microsemi Corporation

Rectifier Diode, 1 Element, 0.4A, 500V V(RRM), Silicon, DO-35,

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JAN1N645

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Rectifier Diode, 1 Element, 0.15A, 225V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN

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