1N5809URS

Details

Manufacturer No 1N5809URS

Manufacturer Microchip Technology

Category Diodes - Rectifiers - Single

Datasheet Datasheet

Description DIODE GP 100V 3A SQ-MELF B

Price

$32.85

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Type

Parameter

  • Mfr

    Microchip Technology

  • Speed

    Fast Recovery =< 500ns, > 200mA (Io)

  • Series

    -

  • Package

    Bulk

  • Diode Type

    Standard

  • Mounting Type

    Surface Mount

  • Package / Case

    SQ-MELF, B

  • Product Status

    Active

  • Capacitance @ Vr, F

    60pF @ 10V, 1MHz

  • Supplier Device Package

    SQ-MELF, B

  • Reverse Recovery Time (trr)

    30 ns

  • Current - Reverse Leakage @ Vr

    5 µA @ 100 V

  • Voltage - DC Reverse (Vr) (Max)

    100 V

  • Current - Average Rectified (Io)

    3A

  • Operating Temperature - Junction

    -65°C ~ 175°C

  • Voltage - Forward (Vf) (Max) @ If

    875 mV @ 4 A

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Qty

Unit Price

Total Price

1

$31.8645

$31.8645

50

$30.222

$1511.1

100

$29.2365

$2923.65

1000

$27.9225

$27922.5

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1N5809CBUS

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SP5809AUS

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Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, E PACKAGE-2

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UF3001

Silitek Corp

Rectifier Diode, 1 Element, 3A, 50V V(RRM)

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UF5400

Surge Components Inc

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD,

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JANTXV1N5809URS

Microsemi Corporation

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2

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HER302G

Sangdest Microelectronics (Nanjing) Co Ltd

Rectifier Diode,

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UG3001

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Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD,

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JAN1N5807URS

Microsemi Corporation

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2

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